| PART |
Description |
Maker |
| K4H1G0438A-UC_LA2 K4H1G0438A-UC_LCC K4H1G0438AUC_L |
1Gb A-die SDRAM Specification
|
SAMSUNG[Samsung semiconductor]
|
| K4T1G044QA-ZCD5 K4T1G084QA-ZCD5 K4T1G164QA-ZCE6 K4 |
1Gb A-die DDR2 SDRAM Specification
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4B1G0446D |
1Gb D-die DDR3 SDRAM Specification
|
Samsung semiconductor
|
| K4T1G084QC K4T1G044QC |
1Gb C-die DDR2 SDRAM Specification
|
Samsung semiconductor
|
| K4T1G044QA K4T1G164QA-ZCD5 K4T1G164QA-ZCE6 K4T1G04 |
1Gb A-die DDR2 SDRAM Specification
|
SAMSUNG[Samsung semiconductor]
|
| K4H1G0438AUC/LB3 K4H1G0838AUC/LB0 K4H1G0438A-UC/LB |
1Gb A-die SDRAM Specification 1GB的芯片内存规
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4T1G044QF-BCE6 K4T1G044QF-BCE7 K4T1G044QF-BCF7 K4 |
1Gb F-die DDR2 SDRAM 60FBGA/84FBGA with Lead-Free & Halogen-Free (RoHS compliant)
|
Samsung semiconductor
|
| KFG5616Q1A-PEB6 |
OneNAND Specification FLASH MEMORY
|
http://
|
| HFDOM40MRXXX DOM40MR032 |
40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.1GB，真正的IDE接口模式3.3 / 5.0V工作
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
| WV3EG265M72EFSU262D4S WV3EG265M72EFSU265D4SG |
1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA 1GB 2x64Mx72 DDR内存，无缓冲，锁相环，FBGA封装
|
Square D by Schneider Electric
Diodes, Inc.
|
| W3EG64128S-AD4 |
1GB - 2x64Mx64 DDR SDRAM UNBUFFERED w/PLL 1GB 2x64Mx64 DDR SDRAM的缓冲瓦锁相
|
Electronic Theatre Controls, Inc.
|
| WV3EG264M64EFSU335D4-MG |
1GB- 2x64Mx64 DDR SDRAM UNBUFFERED, w/PLL 1GB 2x64Mx64 DDR SDRAM的缓冲，瓦特/锁相
|
Supertex, Inc.
|
